2N5551-T

2N5551-T vs 2N5551-TA vs 2N5551-TAP

 
PartNumber2N5551-T2N5551-TA2N5551-TAP
DescriptionBipolar Transistors - BJT NPN 0.6A 160V
ManufacturerRectron--
Product CategoryBipolar Transistors - BJT--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-92-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max160 V--
Collector Base Voltage VCBO180 V--
Emitter Base Voltage VEBO6 V--
Collector Emitter Saturation Voltage0.2 V--
Gain Bandwidth Product fT100 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
DC Current Gain hFE Max250--
PackagingReel--
BrandRectron--
Continuous Collector Current0.6 A--
DC Collector/Base Gain hfe Min30--
Pd Power Dissipation625 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity2000--
SubcategoryTransistors--
Unit Weight0.016000 oz--
Manufacturer Part # Description RFQ
Rectron
Rectron
2N5551-T Bipolar Transistors - BJT NPN 0.6A 160V
2N5551-TA New and Original
2N5551-TAP New and Original
2N5551-TO92 New and Original
2N5551-T Bipolar Transistors - BJT NPN 0.6A 160V
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