PartNumber | 2N5551-T | 2N5551-TA | 2N5551-TAP |
Description | Bipolar Transistors - BJT NPN 0.6A 160V | ||
Manufacturer | Rectron | - | - |
Product Category | Bipolar Transistors - BJT | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | Through Hole | - | - |
Package / Case | TO-92-3 | - | - |
Transistor Polarity | NPN | - | - |
Configuration | Single | - | - |
Collector Emitter Voltage VCEO Max | 160 V | - | - |
Collector Base Voltage VCBO | 180 V | - | - |
Emitter Base Voltage VEBO | 6 V | - | - |
Collector Emitter Saturation Voltage | 0.2 V | - | - |
Gain Bandwidth Product fT | 100 MHz | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
DC Current Gain hFE Max | 250 | - | - |
Packaging | Reel | - | - |
Brand | Rectron | - | - |
Continuous Collector Current | 0.6 A | - | - |
DC Collector/Base Gain hfe Min | 30 | - | - |
Pd Power Dissipation | 625 mW | - | - |
Product Type | BJTs - Bipolar Transistors | - | - |
Factory Pack Quantity | 2000 | - | - |
Subcategory | Transistors | - | - |
Unit Weight | 0.016000 oz | - | - |