PartNumber | 2N5629 PBFREE | 2N5629 | 2N5643 |
Description | Bipolar Transistors - BJT 100Vcbo 100Vceo 7.0Vebo 5.0A 200W | Bipolar Transistors - BJT NPN High Pwr | RF Bipolar Transistors RF Transistor |
Manufacturer | Central Semiconductor | Central Semiconductor | Advanced Semiconductor, Inc. |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | RF Bipolar Transistors |
RoHS | Y | T | Y |
Technology | Si | - | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-3-2 | TO-3-2 | MT72 |
Transistor Polarity | NPN | NPN | NPN |
Configuration | Single | - | - |
Collector Emitter Voltage VCEO Max | 100 V | 100 V | 35 V |
Collector Base Voltage VCBO | 100 V | 100 V | - |
Emitter Base Voltage VEBO | 7 V | 7 V | 4 V |
Collector Emitter Saturation Voltage | 2 V | 2 V | - |
Gain Bandwidth Product fT | 1 MHz | 1 MHz | 200 MHz |
Minimum Operating Temperature | - 65 C | - 60 C | - 65 C |
Maximum Operating Temperature | + 200 C | + 200 C | + 200 C |
Series | 2N56 | 2N5629 | - |
DC Current Gain hFE Max | 100 at 8 A, 2 V | - | - |
Packaging | Tube | Tube | Tray |
Brand | Central Semiconductor | Central Semiconductor | Advanced Semiconductor, Inc. |
Continuous Collector Current | 16 A | 0.45 A | 5 A |
DC Collector/Base Gain hfe Min | 25 at 8 A, 2 V | 4 at 16 A, 2 V | 5 |
Pd Power Dissipation | 200 W | 200 W | 60 W |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | RF Bipolar Transistors |
Factory Pack Quantity | 20 | 20 | - |
Subcategory | Transistors | Transistors | Transistors |
Maximum DC Collector Current | - | 16 A | - |
Part # Aliases | - | 2N5629 TIN/LEAD | - |
Unit Weight | - | 0.225789 oz | 0.105822 oz |
Transistor Type | - | - | Bipolar Power |
Operating Frequency | - | - | 175 MHz |
Type | - | - | RF Bipolar Power |