2N582

2N5822 vs 2N5823 vs 2N5820

 
PartNumber2N58222N58232N5820
DescriptionBipolar Transistors - BJT 70Vcbo 70Vces 60Vceo 5.0V 750mA 625wWBipolar Transistors - BJT Small Signal Transistor
ManufacturerCentral SemiconductorCentral Semiconductor-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYY-
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-92-3TO-92-3-
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max60 V--
Collector Base Voltage VCBO70 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage0.75 V--
Maximum DC Collector Current750 mA--
Gain Bandwidth Product fT120 MHz--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
PackagingBulkBulk-
BrandCentral SemiconductorCentral Semiconductor-
Continuous Collector Current750 mA--
DC Collector/Base Gain hfe Min---
Pd Power Dissipation625 mW--
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity20002000-
SubcategoryTransistorsTransistors-
Part # Aliases2N5822 PBFREE2N5823 PBFREE-
Unit Weight0.007266 oz--
Series-2N5823-
Manufacturer Part # Description RFQ
Central Semiconductor
Central Semiconductor
2N5822 Bipolar Transistors - BJT 70Vcbo 70Vces 60Vceo 5.0V 750mA 625wW
2N5823 Bipolar Transistors - BJT Small Signal Transistor
2N5820 New and Original
2N5827 New and Original
2N5827A New and Original
2N5823 Bipolar Transistors - BJT Small Signal Transisto
Central Semiconductor
Central Semiconductor
2N5822 THROUGH-HOLE TRANSISTOR-SMALL SI
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