PartNumber | 2N5912 | 2N5950 | 2N5951 |
Description | JFET Dual JFET N-Ch -25V 50mA 500mW 4mW | RF JFET Transistors NCh RF Transistor | RF JFET Transistors NCh RF Transistor |
Manufacturer | InterFET | ON Semiconductor | ON Semiconductor |
Product Category | JFET | RF JFET Transistors | RF JFET Transistors |
RoHS | Y | Y | Y |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | SOIC-8 | TO-92-3 | TO-92-3 |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Configuration | Single | Single | Single |
Vds Drain Source Breakdown Voltage | 10 V | 15 V | 15 V |
Vgs Gate Source Breakdown Voltage | 25 V | 30 V | 30 V |
Drain Source Current at Vgs=0 | 40 mA | - | - |
Pd Power Dissipation | 500 mW (1/2 W) | 350 mW | 350 mW |
Packaging | Bulk | Bulk | Bulk |
Type | JFET | JFET | JFET |
Brand | InterFET | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
Forward Transconductance Min | 5000 uS | - | - |
Gate Source Cutoff Voltage | 5 V | 2.5 V to 6 V | 2 V to 5 V |
Factory Pack Quantity | 1 | 2000 | 2000 |
Part # Aliases | IFN5912 | - | - |
Transistor Type | - | JFET | JFET |
Technology | - | Si | Si |
Id Continuous Drain Current | - | 15 mA | 13 mA |
Maximum Drain Gate Voltage | - | 30 V | 30 V |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Maximum Operating Temperature | - | + 150 C | + 150 C |
Height | - | 5.33 mm | 5.33 mm |
Length | - | 5.2 mm | 5.2 mm |
Product | - | RF JFET | RF JFET |
Series | - | 2N5950 | - |
Width | - | 4.19 mm | 4.19 mm |
Product Type | - | RF JFET Transistors | RF JFET Transistors |
Subcategory | - | Transistors | Transistors |
Unit Weight | - | 0.007055 oz | 0.007090 oz |