2N6052

2N6052G vs 2N6052. vs 2N6052-JQR-B

 
PartNumber2N6052G2N6052.2N6052-JQR-B
DescriptionDarlington Transistors 12A 100V Bipolar Power PNPTrans Darlington PNP 100V 12A 3-Pin(2+Tab) TO-3 TrayBipolar Transistors - BJT BIPOLAR POWER TRANSISTOR
ManufacturerON Semiconductor--
Product CategoryDarlington Transistors--
RoHSY--
ConfigurationSingle--
Transistor PolarityPNP--
Collector Emitter Voltage VCEO Max100 V--
Emitter Base Voltage VEBO5 V--
Collector Base Voltage VCBO100 V--
Maximum DC Collector Current12 A--
Maximum Collector Cut off Current1000 uA--
Pd Power Dissipation150 W--
Mounting StyleThrough Hole--
Package / CaseTO-204-2 (TO-3)--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
Series2N6052--
PackagingTray--
DC Current Gain hFE Max18000--
Height8.51 mm--
Length39.37 mm--
Width26.67 mm--
BrandON Semiconductor--
Continuous Collector Current12 A--
DC Collector/Base Gain hfe Min100, 750--
Product TypeDarlington Transistors--
Factory Pack Quantity100--
SubcategoryTransistors--
Unit Weight0.423993 oz--
Manufacturer Part # Description RFQ
2N6052G Darlington Transistors 12A 100V Bipolar Power PNP
2N6052. Trans Darlington PNP 100V 12A 3-Pin(2+Tab) TO-3 Tray
2N6052G. BIP T03 PNP 12A 100V ROHS COMPLIANT: YES
2N6052JAN Trans GP BJT PNP 100V 12A 2-Pin TO-3 Tray - Trays (Alt: JAN2N6052)
2N6052JANTX Trans GP BJT PNP 100V 12A 2-Pin TO-3 Tray - Trays (Alt: JANTX2N6052)
2N6052-JQR-B Bipolar Transistors - BJT BIPOLAR POWER TRANSISTOR
Central Semiconductor
Central Semiconductor
2N6052 Darlington Transistors PNP Pwr Darlington
Central Semiconductor
Central Semiconductor
2N6052 Darlington Transistors PNP Pwr Darlington
ON Semiconductor
ON Semiconductor
2N6052G Darlington Transistors 12A 100V Bipolar Power PNP
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