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| PartNumber | 2N6193 | 2N6193U3 |
| Description | Bipolar Transistors - BJT Power BJT | Bipolar Transistors - BJT Power BJT |
| Manufacturer | Microchip | Microchip |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | N | N |
| Technology | Si | - |
| Mounting Style | Through Hole | - |
| Package / Case | TO-39-3 | - |
| Transistor Polarity | PNP | - |
| Configuration | Single | - |
| Collector Emitter Voltage VCEO Max | 100 V | - |
| Collector Base Voltage VCBO | 100 V | - |
| Emitter Base Voltage VEBO | 6 V | - |
| Collector Emitter Saturation Voltage | 700 mV | - |
| Maximum DC Collector Current | 5 A | - |
| Minimum Operating Temperature | - 65 C | - |
| Maximum Operating Temperature | + 200 C | - |
| DC Current Gain hFE Max | 240 at 2 A, 2 VDC | - |
| Packaging | Bulk | Tray |
| Brand | Microchip / Microsemi | Microchip / Microsemi |
| DC Collector/Base Gain hfe Min | 60 at 2 A, 2 VDC | - |
| Pd Power Dissipation | 1 W | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 1 | 1 |
| Subcategory | Transistors | Transistors |