PartNumber | 2N6422 PBFREE | 2N6420 PBFREE | 2N6421 |
Description | Bipolar Transistors - BJT PNP 500Vcbo 300Vceo 6.0Vebo | Bipolar Transistors - BJT PNP 250Vcbo 175Vceo 6.0Vebo | Darlington Transistors . . |
Manufacturer | Central Semiconductor | Central Semiconductor | Central Semiconductor |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Darlington Transistors |
RoHS | Y | Y | Y |
Technology | Si | Si | - |
Mounting Style | Through Hole | Through Hole | - |
Package / Case | TO-66-2 | TO-66-2 | TO-66 |
Transistor Polarity | PNP | PNP | - |
Configuration | Single | Single | - |
Collector Emitter Voltage VCEO Max | 300 V | 175 V | - |
Collector Base Voltage VCBO | 500 V | 250 V | - |
Emitter Base Voltage VEBO | 6 V | 6 V | - |
Collector Emitter Saturation Voltage | 0.75 V | 0.75 V | - |
Gain Bandwidth Product fT | 10 MHz | 10 MHz | - |
Minimum Operating Temperature | - 65 C | - 65 C | - |
Maximum Operating Temperature | + 200 C | + 200 C | - |
Series | 2N64 | 2N64 | 2N6421 |
DC Current Gain hFE Max | 80 at 500 mA, 10 V | 200 at 500 mA, 10 V | - |
Packaging | Tube | Tube | Tube |
Brand | Central Semiconductor | Central Semiconductor | Central Semiconductor |
Continuous Collector Current | 2 A | 1 A | - |
DC Collector/Base Gain hfe Min | 8 at 500 mA, 10 V | 40 at 500 mA, 10 V | - |
Pd Power Dissipation | 35 W | 35 W | - |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | Darlington Transistors |
Factory Pack Quantity | 30 | 30 | 30 |
Subcategory | Transistors | Transistors | Transistors |
Part # Aliases | - | - | 2N6421 PBFREE |