 |  | | |
| PartNumber | 2N6517CTA | 2N6517C | 2N6517CTA_NL |
| Description | Bipolar Transistors - BJT NPN Si Transistor Epitaxial | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-92-3 Kinked Lead | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 350 V | - | - |
| Collector Base Voltage VCBO | 350 V | - | - |
| Emitter Base Voltage VEBO | 6 V | - | - |
| Collector Emitter Saturation Voltage | 1 V | - | - |
| Maximum DC Collector Current | 0.5 A | - | - |
| Gain Bandwidth Product fT | 200 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | 2N6517 | - | - |
| DC Current Gain hFE Max | 200 | - | - |
| Height | 4.7 mm | - | - |
| Length | 4.7 mm | - | - |
| Packaging | Ammo Pack | - | - |
| Width | 3.93 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Continuous Collector Current | 0.5 A | - | - |
| DC Collector/Base Gain hfe Min | 30 | - | - |
| Pd Power Dissipation | 625 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 2000 | - | - |
| Subcategory | Transistors | - | - |
| Part # Aliases | 2N6517CTA_NL | - | - |
| Unit Weight | 0.008466 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
2N6517CTA | Bipolar Transistors - BJT NPN Si Transistor Epitaxial | |
| 2N6517C | New and Original | ||
| 2N6517CTA_NL | New and Original | ||
| 2N6517CTA_Q | Bipolar Transistors - BJT NPN Si Transistor Epitaxial | ||
ON Semiconductor |
2N6517CBU | TRANS NPN 400V 0.5A TO-92 | |
| 2N6517CTA | Bipolar Transistors - BJT NPN Si Transistor Epitaxial |