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| PartNumber | 2N6716 | 2N6716STOA | 2N6716STOB |
| Description | Bipolar Transistors - BJT NPN Med Powe | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| Manufacturer | Central Semiconductor | - | - |
| Product Category | Transistors - Bipolar (BJT) - RF | - | - |
| Series | 2N6716 | - | - |
| Packaging | Bulk | - | - |
| Part Aliases | BK | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package Case | TO-237 | - | - |
| Pd Power Dissipation | 2 W | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Collector Emitter Voltage VCEO Max | 60 V | - | - |
| Transistor Polarity | NPN | - | - |
| Collector Emitter Saturation Voltage | 500 mV | - | - |
| Collector Base Voltage VCBO | 60 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Maximum DC Collector Current | 2 A | - | - |
| Gain Bandwidth Product fT | 500 MHz | - | - |
| DC Collector Base Gain hfe Min | 50 at 250 mA 1 V | - | - |