PartNumber | 2N6800 | 2N6800U |
Description | MOSFET N Channel MOSFET | MOSFET N Channel MOSFET |
Manufacturer | Microchip | Microchip |
Product Category | MOSFET | MOSFET |
RoHS | N | N |
Technology | Si | Si |
Mounting Style | Through Hole | SMD/SMT |
Package / Case | TO-205AF-3 | LCC-18 |
Number of Channels | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 400 V | - |
Id Continuous Drain Current | 3 A | - |
Rds On Drain Source Resistance | 1.1 Ohms | - |
Vgs th Gate Source Threshold Voltage | 2 V | - |
Vgs Gate Source Voltage | 20 V | - |
Qg Gate Charge | 34.75 nC | - |
Minimum Operating Temperature | - 55 C | - |
Maximum Operating Temperature | + 150 C | - |
Pd Power Dissipation | 25 W | - |
Configuration | Single | Single |
Channel Mode | Enhancement | - |
Transistor Type | 1 N-Channel | 1 N-Channel |
Brand | Microchip / Microsemi | Microchip / Microsemi |
Fall Time | 35 ns | - |
Product Type | MOSFET | MOSFET |
Rise Time | 35 ns | - |
Factory Pack Quantity | 100 | 100 |
Subcategory | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 55 ns | - |
Typical Turn On Delay Time | 30 ns | - |