2N7002A-7

2N7002A-7 vs 2N7002A-7 /MN1 vs 2N7002A-7-31

 
PartNumber2N7002A-72N7002A-7 /MN12N7002A-7-31
DescriptionMOSFET N-CHANNEL ENHANCEMENT MODE
ManufacturerDiodes IncorporatedDIODES-
Product CategoryMOSFETIC Chips-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current220 mA--
Rds On Drain Source Resistance6 Ohms--
Vgs th Gate Source Threshold Voltage1.2 V--
Vgs Gate Source Voltage5 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation540 mW--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height1 mm--
Length2.9 mm--
ProductMOSFET Small Signal--
Series2N7002--
Transistor Type1 N-Channel--
Width1.3 mm--
BrandDiodes Incorporated--
Forward Transconductance Min80 mS--
Product TypeMOSFET--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time33 ns--
Typical Turn On Delay Time10 ns--
Unit Weight0.000282 oz--
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
2N7002A-7 MOSFET N-CHANNEL ENHANCEMENT MODE
2N7002A-7 /MN1 New and Original
2N7002A-7 Darlington Transistors MOSFET N-CHANNEL ENHANCEMENT MODE
2N7002A-7-31 New and Original
2N7002A-7-F New and Original
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