 |  | | |
| PartNumber | 2N7002DWH6327XT | 2N7002DWH | 2N7002DWH6327 |
| Description | MOSFET N-Ch 60V 300mA SOT-363-6 | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.3A I(D), 60V, 2-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | |
| Manufacturer | Infineon | Infineon Technologies | - |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-363-6 | - | - |
| Number of Channels | 2 Channel | 2 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 300 mA | - | - |
| Rds On Drain Source Resistance | 1.6 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 600 pC, 600 pC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 500 mW (1/2 W) | - | - |
| Configuration | Dual | Dual | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | - | - |
| Packaging | Reel | Reel | - |
| Height | 0.9 mm | - | - |
| Length | 2 mm | - | - |
| Series | 2N7002 | 2N7002 | - |
| Transistor Type | 2 N-Channel | 2 N-Channel | - |
| Width | 1.25 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 200 mS, 200 mS | - | - |
| Fall Time | 3.1 ns, 3.1 ns | 3.1 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 3.3 ns, 3.3 ns | 3.3 ns | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 5.5 ns, 5.5 ns | 5.5 ns | - |
| Typical Turn On Delay Time | 3 ns, 3 ns | - | - |
| Part # Aliases | 2N7002DWH6327XTSA1 SP000917596 | - | - |
| Unit Weight | 0.000265 oz | 0.000265 oz | - |
| Part Aliases | - | 2N7002DWH6327XTSA1 SP000917596 | - |
| Package Case | - | SOT-363-6 | - |
| Pd Power Dissipation | - | 500 mW | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 300 mA | - |
| Vds Drain Source Breakdown Voltage | - | 60 V | - |
| Rds On Drain Source Resistance | - | 3 Ohms | - |
| Qg Gate Charge | - | 0.4 nC | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
2N7002DWH6327XTSA1 | MOSFET N-Ch 60V 300mA SOT-363-6 | |
| 2N7002DWH6327XT | MOSFET N-Ch 60V 300mA SOT-363-6 | ||
| 2N7002DWH6327XTSA1 | MOSFET 2N-CH 60V 0.3A SOT363 | ||
| 2N7002DWH | New and Original | ||
| 2N7002DWH6327 | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.3A I(D), 60V, 2-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET |