 |  | | |
| PartNumber | 2N7002E-7-F | 2N7002E-7 | 2N7002E-7 , PZM5.6NB3 , |
| Description | MOSFET N-Channel | MOSFET N-Channel | |
| Manufacturer | Diodes Incorporated | DIODES | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-23-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 300 mA | - | - |
| Rds On Drain Source Resistance | 3 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 223 pC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 540 mW | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 1 mm | - | - |
| Length | 2.9 mm | - | - |
| Product | MOSFET Small Signal | - | - |
| Series | 2N7002E | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 1.3 mm | - | - |
| Brand | Diodes Incorporated | - | - |
| Forward Transconductance Min | 80 mS | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 11 ns | - | - |
| Typical Turn On Delay Time | 7 ns | - | - |
| Unit Weight | 0.000282 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Diodes Incorporated |
2N7002E-7-F | MOSFET N-Channel | |
| 2N7002E-7 | MOSFET N-Channel | ||
| 2N7002E-7 , PZM5.6NB3 , | New and Original | ||
| 2N7002E-7-F | IGBT Transistors MOSFET N-Channel | ||
| 2N7002E-7-F-CUT TAPE | New and Original |