PartNumber | 2N7002W-7-F | 2N7002W-7 | 2N7002W-7-F , MAX6716UTS |
Description | MOSFET 60V 200mW | MOSFET 60V 200mW | |
Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | N | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SOT-323-3 | SOT-323-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 60 V | 70 V | - |
Id Continuous Drain Current | 115 mA | 115 mA | - |
Rds On Drain Source Resistance | 13.5 Ohms | 2.6 Ohms | - |
Vgs th Gate Source Threshold Voltage | 1 V | - | - |
Vgs Gate Source Voltage | 10 V | 20 V | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 200 mW | 200 mW | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Reel | - | - |
Height | 1 mm | 1 mm | - |
Length | 2.2 mm | 2.2 mm | - |
Product | MOSFET Small Signal | MOSFET Small Signal | - |
Series | 2N7002W | 2N7002W | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Type | Enhancement Mode Field Effect Transistor | FET | - |
Width | 1.35 mm | 1.35 mm | - |
Brand | Diodes Incorporated | Diodes Incorporated | - |
Forward Transconductance Min | 80 mS | 0.08 S | - |
Product Type | MOSFET | MOSFET | - |
Factory Pack Quantity | 3000 | 3000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 11 ns | 11 ns | - |
Typical Turn On Delay Time | 7 ns | 7 ns | - |
Unit Weight | 0.000988 oz | 0.000176 oz | - |