2N7002W-7

2N7002W-7-F vs 2N7002W-7 vs 2N7002W-7-F , MAX6716UTS

 
PartNumber2N7002W-7-F2N7002W-72N7002W-7-F , MAX6716UTS
DescriptionMOSFET 60V 200mWMOSFET 60V 200mW
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryMOSFETMOSFET-
RoHSYN-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-323-3SOT-323-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage60 V70 V-
Id Continuous Drain Current115 mA115 mA-
Rds On Drain Source Resistance13.5 Ohms2.6 Ohms-
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage10 V20 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation200 mW200 mW-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReel--
Height1 mm1 mm-
Length2.2 mm2.2 mm-
ProductMOSFET Small SignalMOSFET Small Signal-
Series2N7002W2N7002W-
Transistor Type1 N-Channel1 N-Channel-
TypeEnhancement Mode Field Effect TransistorFET-
Width1.35 mm1.35 mm-
BrandDiodes IncorporatedDiodes Incorporated-
Forward Transconductance Min80 mS0.08 S-
Product TypeMOSFETMOSFET-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time11 ns11 ns-
Typical Turn On Delay Time7 ns7 ns-
Unit Weight0.000988 oz0.000176 oz-
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
2N7002W-7-F MOSFET 60V 200mW
2N7002W-7 MOSFET 60V 200mW
2N7002W-7 MOSFET N-CH 60V 115MA SOT-323
2N7002W-7-F , MAX6716UTS New and Original
2N7002W-7-F , MAX6716UTSYD3 New and Original
2N7002W-7-F K72 KN New and Original
2N7002W-7-F-2063 New and Original
2N7002W-7-F-73 New and Original
2N7002W-7-F Darlington Transistors MOSFET 60V 200mW
2N7002W-7-F-CUT TAPE New and Original
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