 |  | | |
| PartNumber | 2SA1162-Y,LF | 2SA1162-Y,LF(T | 2SA1162-Y,LF(B |
| Description | Bipolar Transistors - BJT PNP Transistor -50V S-Mini -0.15A -0.3V | 2SA1162-Y,LF(B | |
| Manufacturer | Toshiba | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SC-59-3 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Collector Base Voltage VCBO | 50 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Collector Emitter Saturation Voltage | 0.1 V | - | - |
| Maximum DC Collector Current | 150 mA | - | - |
| Gain Bandwidth Product fT | 80 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 125 C | - | - |
| Series | 2SA1162 | - | - |
| DC Current Gain hFE Max | 400 | - | - |
| Packaging | Reel | - | - |
| Brand | Toshiba | - | - |
| DC Collector/Base Gain hfe Min | 70 | - | - |
| Pd Power Dissipation | 150 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.000282 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Toshiba |
2SA1162-Y,LF | Bipolar Transistors - BJT PNP Transistor -50V S-Mini -0.15A -0.3V | |
| 2SA1162-Y,LF | Bipolar Transistors - BJT PNP Transistor -50V S-Mini -0.15A -0.3V | ||
| 2SA1162-Y,LF(T | New and Original | ||
| 2SA1162-Y,LF(B | 2SA1162-Y,LF(B |