2SA1163-B

2SA1163-BL(TE85L,F vs 2SA1163-BL vs 2SA1163-BL(TE85L,F)

 
PartNumber2SA1163-BL(TE85L,F2SA1163-BL2SA1163-BL(TE85L,F)
DescriptionBipolar Transistors - BJT PNP Trans -0.1A LN -120V VCEOTrans GP BJT PNP 120V 0.1A 3-Pin S-Mini T/R
ManufacturerToshiba--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOT-346-3--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max- 120 V--
Collector Base Voltage VCBO- 120 V--
Emitter Base Voltage VEBO- 5 V--
Collector Emitter Saturation Voltage- 0.3 V--
Maximum DC Collector Current- 100 mA--
Gain Bandwidth Product fT100 MHz--
Series2SA1163--
DC Current Gain hFE Max700--
PackagingReel--
BrandToshiba--
Continuous Collector Current- 100 mA--
DC Collector/Base Gain hfe Min200--
Pd Power Dissipation150 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Manufacturer Part # Description RFQ
Toshiba
Toshiba
2SA1163-BL(TE85L,F Bipolar Transistors - BJT PNP Trans -0.1A LN -120V VCEO
2SA1163-BL,LF Bipolar Transistors - BJT Transistor for Low Freq. Amplification
2SA1163-BL New and Original
2SA1163-BL(TE85L,F Bipolar Transistors - BJT PNP Trans -0.1A LN -120V VCEO
2SA1163-BLLFCT-ND New and Original
2SA1163-BLLFDKR-ND New and Original
2SA1163-BLLFTR-ND New and Original
2SA1163-BL,LF TRANS PNP 120V 0.1A S-MINI
2SA1163-BL(TE85L,F) Trans GP BJT PNP 120V 0.1A 3-Pin S-Mini T/R
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