PartNumber | 2SA1587-GR,LF | 2SA1587-BL,LF | 2SA1587GRTE85LF |
Description | Bipolar Transistors - BJT Transistor for Low Freq. Amplification | Bipolar Transistors - BJT Bias Resistor Built-in transistor | Bipolar Transistors - BJT PNP Trans -0.1A LN -120V VCEO |
Manufacturer | Toshiba | Toshiba | Toshiba |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | Y | Y |
Technology | Si | - | - |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SC-70-3 | SC-70-3 | SOT-323-3 |
Transistor Polarity | PNP | PNP | PNP |
Configuration | Single | - | Single |
Collector Emitter Voltage VCEO Max | - 120 V | - 120 V | - 120 V |
Collector Base Voltage VCBO | - 120 V | - 120 V | - 120 V |
Emitter Base Voltage VEBO | - 5 V | - 5 V | - 5 V |
Collector Emitter Saturation Voltage | - 300 mV | - 0.3 V | - 0.3 V |
Maximum DC Collector Current | - 100 mA | - 100 mA | - 100 mA |
Gain Bandwidth Product fT | 100 MHz | 100 MHz | 100 MHz |
Maximum Operating Temperature | + 125 C | - | + 125 C |
Series | 2SA1587 | 2SA1587 | 2SA1587 |
DC Current Gain hFE Max | 700 | 700 | 700 |
Packaging | Reel | Reel | Reel |
Brand | Toshiba | Toshiba | Toshiba |
DC Collector/Base Gain hfe Min | 200 | 200 | 200 |
Pd Power Dissipation | 100 mW | 100 mW | 100 mW |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | Transistors | Transistors | Transistors |
Unit Weight | 0.000212 oz | 0.000219 oz | 0.000176 oz |
Continuous Collector Current | - | - 100 mA | - 100 mA |
Minimum Operating Temperature | - | - | - 55 C |