PartNumber | 2SA1586-GR,LF | 2SA1586-Y(TE85L,F) | 2SA1586-GR(T5L,F,T |
Description | Bipolar Transistors - BJT PNP Transistor -50V USM -0.15A -0.3V | Bipolar Transistors - BJT VCEO - 50V to -150mA HFE 70-400 1dB 10dB | Bipolar Transistors - BJT -150mA -50V |
Manufacturer | Toshiba | Toshiba | Toshiba |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | Y | Y |
Mounting Style | SMD/SMT | - | SMD/SMT |
Package / Case | SC-70-3 | - | USM-3 |
Transistor Polarity | PNP | - | PNP |
Configuration | Single | - | Single |
Collector Emitter Voltage VCEO Max | 50 V | - | 50 V |
Collector Base Voltage VCBO | 50 V | - | - 50 V |
Emitter Base Voltage VEBO | 5 V | - | - 5 V |
Collector Emitter Saturation Voltage | 0.1 V | - | - |
Maximum DC Collector Current | 150 mA | - | 0.15 A |
Gain Bandwidth Product fT | 80 MHz | - | 80 MHz |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 125 C | - | + 125 C |
Series | 2SA1586 | 2SA1586 | 2SA1586 |
DC Current Gain hFE Max | 400 | - | 400 |
Packaging | Reel | Reel | Reel |
Brand | Toshiba | Toshiba | Toshiba |
DC Collector/Base Gain hfe Min | 70 | - | 200 |
Pd Power Dissipation | 100 mW | - | 100 mW |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | Transistors | Transistors | Transistors |
Unit Weight | 0.000219 oz | - | - |
Height | - | - | 0.9 mm |
Length | - | - | 2 mm |
Width | - | - | 1.25 mm |
Continuous Collector Current | - | - | - 150 mA |