 |  | | |
| PartNumber | 2SA1587-BL,LF | 2SA1587-BL | 2SA1587-BL(TE85L,F |
| Description | Bipolar Transistors - BJT Bias Resistor Built-in transistor | Trans GP BJT PNP 120V 0.1A 3-Pin USM T/R | |
| Manufacturer | Toshiba | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SC-70-3 | - | - |
| Transistor Polarity | PNP | - | - |
| Collector Emitter Voltage VCEO Max | - 120 V | - | - |
| Collector Base Voltage VCBO | - 120 V | - | - |
| Emitter Base Voltage VEBO | - 5 V | - | - |
| Collector Emitter Saturation Voltage | - 0.3 V | - | - |
| Maximum DC Collector Current | - 100 mA | - | - |
| Gain Bandwidth Product fT | 100 MHz | - | - |
| Series | 2SA1587 | - | - |
| DC Current Gain hFE Max | 700 | - | - |
| Packaging | Reel | - | - |
| Brand | Toshiba | - | - |
| Continuous Collector Current | - 100 mA | - | - |
| DC Collector/Base Gain hfe Min | 200 | - | - |
| Pd Power Dissipation | 100 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.000219 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Toshiba |
2SA1587-BL,LF | Bipolar Transistors - BJT Bias Resistor Built-in transistor | |
| 2SA1587-BL | New and Original | ||
| 2SA1587-BL,LF | Bipolar Transistors - BJT Bias Resistor Built-in transisto | ||
| 2SA1587-BLLFCT-ND | New and Original | ||
| 2SA1587-BLLFDKR-ND | New and Original | ||
| 2SA1587-BLLFTR-ND | New and Original | ||
| 2SA1587-BL(TE85L,F | Trans GP BJT PNP 120V 0.1A 3-Pin USM T/R | ||
| 2SA1587-BLLF | Bipolar Transistors - BJT USM TRANSISTOR(LF) |