 |  | | |
| PartNumber | 2SA1587-GR,LF | 2SA1587-GR | 2SA1587-GR(TE85L,F) |
| Description | Bipolar Transistors - BJT Transistor for Low Freq. Amplification | GP BJT | |
| Manufacturer | Toshiba | TOSHIBA | - |
| Product Category | Bipolar Transistors - BJT | Transistors (BJT) - Single | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SC-70-3 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | - 120 V | - | - |
| Collector Base Voltage VCBO | - 120 V | - | - |
| Emitter Base Voltage VEBO | - 5 V | - | - |
| Collector Emitter Saturation Voltage | - 300 mV | - | - |
| Maximum DC Collector Current | - 100 mA | - | - |
| Gain Bandwidth Product fT | 100 MHz | - | - |
| Maximum Operating Temperature | + 125 C | - | - |
| Series | 2SA1587 | - | - |
| DC Current Gain hFE Max | 700 | - | - |
| Packaging | Reel | - | - |
| Brand | Toshiba | - | - |
| DC Collector/Base Gain hfe Min | 200 | - | - |
| Pd Power Dissipation | 100 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.000212 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Toshiba |
2SA1587-GR,LF | Bipolar Transistors - BJT Transistor for Low Freq. Amplification | |
| 2SA1587-GR | New and Original | ||
| 2SA1587-GR,LF(T | Audio Frequency General Purpose Amplifie | ||
| 2SA1587-GRLFCT-ND | New and Original | ||
| 2SA1587-GRLFDKR-ND | New and Original | ||
| 2SA1587-GRLFTR-ND | New and Original | ||
| 2SA1587-GR,LF | TRANS PNP 120V 0.1A USM | ||
| 2SA1587-GR(TE85L,F) | GP BJT |