PartNumber | 2SA1618-Y(TE85L,F) | 2SA1618-Y(TE85LF)CT-ND | 2SA1618-Y(TE85LF)DKR-ND |
Description | Bipolar Transistors - BJT SMV PLN (LF) TRANSISTOR Pd=300mW F=1MHz | ||
Manufacturer | Toshiba | - | - |
Product Category | Bipolar Transistors - BJT | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | SMT-6 | - | - |
Transistor Polarity | PNP | - | - |
Configuration | Dual | - | - |
Collector Emitter Voltage VCEO Max | - 50 V | - | - |
Collector Base Voltage VCBO | - 50 V | - | - |
Emitter Base Voltage VEBO | - 5 V | - | - |
Collector Emitter Saturation Voltage | - 0.1 V | - | - |
Maximum DC Collector Current | - 150 mA | - | - |
Gain Bandwidth Product fT | 80 MHz | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 125 C | - | - |
DC Current Gain hFE Max | 400 | - | - |
Packaging | Reel | - | - |
Brand | Toshiba | - | - |
Continuous Collector Current | - 150 mA | - | - |
DC Collector/Base Gain hfe Min | 120 | - | - |
Pd Power Dissipation | 300 mW | - | - |
Product Type | BJTs - Bipolar Transistors | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | Transistors | - | - |