2SA1618-Y(T

2SA1618-Y(TE85L,F) vs 2SA1618-Y(TE85LF)CT-ND vs 2SA1618-Y(TE85LF)DKR-ND

 
PartNumber2SA1618-Y(TE85L,F)2SA1618-Y(TE85LF)CT-ND2SA1618-Y(TE85LF)DKR-ND
DescriptionBipolar Transistors - BJT SMV PLN (LF) TRANSISTOR Pd=300mW F=1MHz
ManufacturerToshiba--
Product CategoryBipolar Transistors - BJT--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSMT-6--
Transistor PolarityPNP--
ConfigurationDual--
Collector Emitter Voltage VCEO Max- 50 V--
Collector Base Voltage VCBO- 50 V--
Emitter Base Voltage VEBO- 5 V--
Collector Emitter Saturation Voltage- 0.1 V--
Maximum DC Collector Current- 150 mA--
Gain Bandwidth Product fT80 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 125 C--
DC Current Gain hFE Max400--
PackagingReel--
BrandToshiba--
Continuous Collector Current- 150 mA--
DC Collector/Base Gain hfe Min120--
Pd Power Dissipation300 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Manufacturer Part # Description RFQ
Toshiba
Toshiba
2SA1618-Y(TE85L,F) Bipolar Transistors - BJT SMV PLN (LF) TRANSISTOR Pd=300mW F=1MHz
2SA1618-Y(TE85L,F) New and Original
2SA1618-Y(TE85LF)CT-ND New and Original
2SA1618-Y(TE85LF)DKR-ND New and Original
2SA1618-Y(TE85LF)TR-ND New and Original
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