2SA1705

2SA1705S-AN vs 2SA1705-Y vs 2SA1705T-AN

 
PartNumber2SA1705S-AN2SA1705-Y2SA1705T-AN
DescriptionBipolar Transistors - BJT BIP PNP 1A 50VBipolar Transistors - BJT BIP PNP 1A 50V
ManufacturerON Semiconductor-SANYO
Product CategoryBipolar Transistors - BJT-Transistors (BJT) - Single
RoHSY--
Mounting StyleThrough Hole-SMD/SMT
Package / CaseNMP-3--
Transistor PolarityPNP-PNP
ConfigurationSingle--
Collector Emitter Voltage VCEO Max- 50 V--
Collector Base Voltage VCBO- 60 V--
Emitter Base Voltage VEBO- 5 V--
Collector Emitter Saturation Voltage- 180 mV--
Maximum DC Collector Current- 2 A--
Gain Bandwidth Product fT150 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Series2SA1705-2SA1705
DC Current Gain hFE Max400 at - 100 mA, - 2 V--
PackagingReel-Reel
BrandON Semiconductor--
DC Collector/Base Gain hfe Min140--
Pd Power Dissipation900 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity2500--
SubcategoryTransistors--
Package Case--NMP
Pd Power Dissipation--0.9 W
Collector Emitter Voltage VCEO Max--50 V
Emitter Base Voltage VEBO--5 V
Continuous Collector Current--1 A
DC Collector Base Gain hfe Min--100
Manufacturer Part # Description RFQ
ON Semiconductor
ON Semiconductor
2SA1705S-AN Bipolar Transistors - BJT BIP PNP 1A 50V
2SA1705T-AN Bipolar Transistors - BJT BIP PNP 1A 50V
2SA1705S-AN Bipolar Transistors - BJT BIP PNP 1A 50V
2SA1705-Y New and Original
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