PartNumber | 2SA1832-GR,LF | 2SA1812T100Q | 2SA1807TLP |
Description | Bipolar Transistors - BJT Transistor for Low Freq Sm-Signal Amp | Bipolar Transistors - BJT PNP 400V 0.5A | Bipolar Transistors - BJT PNP;HIGH VOLTAGE HFE RANK 'P' |
Manufacturer | Toshiba | ROHM Semiconductor | ROHM Semiconductor |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | Y | Y |
Technology | Si | - | - |
Mounting Style | SMD/SMT | Through Hole | SMD/SMT |
Package / Case | SOT-426-3 | - | - |
Transistor Polarity | PNP | PNP | PNP |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | - 50 V | - 400 V | - 600 V |
Collector Base Voltage VCBO | - 50 V | - 400 V | - 600 V |
Emitter Base Voltage VEBO | - 5 V | - 7 V | - 7 V |
Collector Emitter Saturation Voltage | - 100 mV | - | - |
Maximum DC Collector Current | - 150 mA | - 1 A | 1 A |
Gain Bandwidth Product fT | 80 MHz | 12 MHz | 15 MHz |
Maximum Operating Temperature | + 125 C | + 150 C | + 150 C |
Series | 2SA1832 | - | - |
DC Current Gain hFE Max | 400 at - 2 mA, - 6 V | 270 | 180 |
Packaging | Reel | Reel | Reel |
Brand | Toshiba | ROHM Semiconductor | ROHM Semiconductor |
DC Collector/Base Gain hfe Min | 70 at - 2 mA, - 6 V | 82 | 56 |
Pd Power Dissipation | 100 mW | 2 W | 1 W |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 3000 | 1000 | 2500 |
Subcategory | Transistors | Transistors | Transistors |
Unit Weight | 0.000085 oz | - | - |
Height | - | 1.5 mm | 2.3 mm |
Length | - | 4.5 mm | 6.5 mm |
Width | - | 2.5 mm | 5.5 mm |
Continuous Collector Current | - | - 0.5 A | - 1 A |
Minimum Operating Temperature | - | - | - 55 C |
Part # Aliases | - | - | 2SA1807 |