PartNumber | 2SA1941-O(Q) | 2SA1943N(S1,E,S) | 2SA1943-O(Q) |
Description | Bipolar Transistors - BJT PNP VCEO -140V 70-W DC -10A 100W | Bipolar Transistors - BJT POWER TRANSISTOR PC=150W; F=30MHZ | Bipolar Transistors - BJT PNP 230V 15A |
Manufacturer | Toshiba | Toshiba | Toshiba |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | Y | Y |
Technology | Si | - | - |
Mounting Style | Through Hole | Through Hole | Through Hole |
Transistor Polarity | PNP | PNP | PNP |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | - 140 V | - 230 V | 230 V |
Collector Base Voltage VCBO | - 140 V | - 230 V | 230 V |
Emitter Base Voltage VEBO | - 5 V | - 5 V | 5 V |
Collector Emitter Saturation Voltage | 2 V | - 1.1 V | - |
Gain Bandwidth Product fT | 30 MHz | 30 MHz | 30 MHz |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
DC Current Gain hFE Max | 83 | 160 | - |
Brand | Toshiba | Toshiba | Toshiba |
Continuous Collector Current | 10 A | - 15 A | - |
DC Collector/Base Gain hfe Min | 35 | 35 | 80 |
Pd Power Dissipation | 100 W | 150 W | 150000 mW |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 4000 | 25 | 100 |
Subcategory | Transistors | Transistors | Transistors |
Unit Weight | 0.165788 oz | 0.246918 oz | 0.238311 oz |
Package / Case | - | TO-3P-3 | TO-3P-3 |
Maximum DC Collector Current | - | - 15 A | 15 A |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Series | - | 2SA1943N | 2SA1943 |
Height | - | - | 26 mm |
Length | - | - | 20.5 mm (Max) |
Width | - | - | 5.2 mm (Max) |