 |  | | |
| PartNumber | 2SA2012-TD-E | 2SA2012 | 2SA2012EJN |
| Description | Bipolar Transistors - BJT BIP PNP 5A 30V | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-89-3 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | - 30 V | - | - |
| Collector Base Voltage VCBO | - 30 V | - | - |
| Emitter Base Voltage VEBO | - 5 V | - | - |
| Collector Emitter Saturation Voltage | - 140 mV | - | - |
| Maximum DC Collector Current | - 5 A | - | - |
| Gain Bandwidth Product fT | 350 MHz | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | 2SA2012 | - | - |
| DC Current Gain hFE Max | 560 | - | - |
| Packaging | Reel | - | - |
| Brand | ON Semiconductor | - | - |
| DC Collector/Base Gain hfe Min | 200 | - | - |
| Pd Power Dissipation | 3.5 W | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.001819 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
| 2SA2012-TD-E | Bipolar Transistors - BJT BIP PNP 5A 30V | ||
| 2SA2012 | New and Original | ||
| 2SA2012EJN | New and Original | ||
ON Semiconductor |
2SA2012-TD-E | Bipolar Transistors - BJT BIP PNP 5A 30V |