PartNumber | 2SA2121-O(Q) | 2SA2121 | 2SA2121-R(Q) |
Description | Bipolar Transistors - BJT PNP 200V 15A | Bipolar Transistors - BJT Transistor PNP 200V 15A | |
Manufacturer | Toshiba | TOSHIBA | Toshiba |
Product Category | Bipolar Transistors - BJT | Transistors (BJT) - Single | Transistors - Bipolar (BJT) - RF |
RoHS | Y | - | - |
Mounting Style | Through Hole | - | - |
Package / Case | TO-264-3 | - | - |
Transistor Polarity | PNP | - | PNP |
Configuration | Single | - | Single |
Collector Emitter Voltage VCEO Max | - 200 V | - | - |
Collector Base Voltage VCBO | - 200 V | - | - |
Emitter Base Voltage VEBO | - 5 V | - | - |
Collector Emitter Saturation Voltage | - 1.5 V | - | - |
Maximum DC Collector Current | - 15 A | - | 15 A |
Gain Bandwidth Product fT | 25 MHz | - | 25 MHz (Typ) |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 150 C | - | + 150 C |
Series | 2SA2121 | - | - |
DC Current Gain hFE Max | 180 | - | - |
Height | 26 mm | - | - |
Length | 20.5 mm (Max) | - | - |
Packaging | Tube | - | - |
Width | 5.2 mm (Max) | - | - |
Brand | Toshiba | - | - |
Continuous Collector Current | - 15 A | - | - |
DC Collector/Base Gain hfe Min | 35 | - | - |
Pd Power Dissipation | 220 W | - | - |
Product Type | BJTs - Bipolar Transistors | - | - |
Factory Pack Quantity | 100 | - | - |
Subcategory | Transistors | - | - |
Unit Weight | 0.373904 oz | - | - |
Package Case | - | - | TO-3PL |
Pd Power Dissipation | - | - | 220000 mW |
Collector Emitter Voltage VCEO Max | - | - | 200 V |
Collector Base Voltage VCBO | - | - | 200 V |
Emitter Base Voltage VEBO | - | - | 5 V |
DC Collector Base Gain hfe Min | - | - | 55 at 1 A at 5 V |