2SA2121

2SA2121-O(Q) vs 2SA2121 vs 2SA2121-R(Q)

 
PartNumber2SA2121-O(Q)2SA21212SA2121-R(Q)
DescriptionBipolar Transistors - BJT PNP 200V 15ABipolar Transistors - BJT Transistor PNP 200V 15A
ManufacturerToshibaTOSHIBAToshiba
Product CategoryBipolar Transistors - BJTTransistors (BJT) - SingleTransistors - Bipolar (BJT) - RF
RoHSY--
Mounting StyleThrough Hole--
Package / CaseTO-264-3--
Transistor PolarityPNP-PNP
ConfigurationSingle-Single
Collector Emitter Voltage VCEO Max- 200 V--
Collector Base Voltage VCBO- 200 V--
Emitter Base Voltage VEBO- 5 V--
Collector Emitter Saturation Voltage- 1.5 V--
Maximum DC Collector Current- 15 A-15 A
Gain Bandwidth Product fT25 MHz-25 MHz (Typ)
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Series2SA2121--
DC Current Gain hFE Max180--
Height26 mm--
Length20.5 mm (Max)--
PackagingTube--
Width5.2 mm (Max)--
BrandToshiba--
Continuous Collector Current- 15 A--
DC Collector/Base Gain hfe Min35--
Pd Power Dissipation220 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity100--
SubcategoryTransistors--
Unit Weight0.373904 oz--
Package Case--TO-3PL
Pd Power Dissipation--220000 mW
Collector Emitter Voltage VCEO Max--200 V
Collector Base Voltage VCBO--200 V
Emitter Base Voltage VEBO--5 V
DC Collector Base Gain hfe Min--55 at 1 A at 5 V
Manufacturer Part # Description RFQ
Toshiba
Toshiba
2SA2121-O(Q) Bipolar Transistors - BJT PNP 200V 15A
2SA2121 New and Original
2SA2121/2SC5949 New and Original
2SA2121-R(Q) Bipolar Transistors - BJT Transistor PNP 200V 15A
2SA2121-O(Q) Bipolar Transistors - BJT PNP 200V 15A
2SA2121O(Q) TRANSISTOR,BJT,PNP,200V V(BR)CEO,15A I(C),TO-264VAR (Also Known As: 2SA2121-O(Q))
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