2SAR523

2SAR523EBTL vs 2SAR523M vs 2SAR523M T2L

 
PartNumber2SAR523EBTL2SAR523M2SAR523M T2L
DescriptionBipolar Transistors - BJT PNP General Purpose Amplification Transistor
ManufacturerROHM SemiconductorRohm Semiconductor-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single, Pre-Biased-
RoHSY--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseEMT-3--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max- 50 V--
Collector Base Voltage VCBO- 50 V--
Emitter Base Voltage VEBO- 5 V--
Collector Emitter Saturation Voltage- 150 mV--
Maximum DC Collector Current- 100 mA--
Gain Bandwidth Product fT300 MHz--
Maximum Operating Temperature+ 150 C--
Series2SAR523EB2SAR523M-
DC Current Gain hFE Max560--
PackagingReelDigi-ReelR Alternate Packaging-
BrandROHM Semiconductor--
DC Collector/Base Gain hfe Min120--
Pd Power Dissipation150 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Part # Aliases2SAR523EB--
Package Case-SOT-723-
Mounting Type-Surface Mount-
Supplier Device Package-VMT3-
Power Max-150mW-
Transistor Type-PNP-
Current Collector Ic Max-100mA-
Voltage Collector Emitter Breakdown Max-50V-
DC Current Gain hFE Min Ic Vce-120 @ 1mA, 6V-
Vce Saturation Max Ib Ic-400mV @ 5mA, 50mA-
Current Collector Cutoff Max-100nA (ICBO)-
Frequency Transition-300MHz-
Manufacturer Part # Description RFQ
2SAR523UBTL Bipolar Transistors - BJT GP Amplification Trans
2SAR523MT2L Bipolar Transistors - BJT PNP General Purpose Amplification Transistor
2SAR523EBTL Bipolar Transistors - BJT PNP General Purpose Amplification Transistor
2SAR523V1T2L Bipolar Transistors - BJT RECOMMENDED ALT 755-2SAR523MT2L
2SAR523M New and Original
2SAR523M T2L New and Original
2SAR523UB TL New and Original
2SAR523V1T2L Bipolar Transistors - BJT BiPolar Transistor PNP
2SAR523MT2L Bipolar Transistors - BJT PNP General Purpose Amplification Transisto
2SAR523EBTL Bipolar Transistors - BJT PNP General Purpose Amplification Transisto
2SAR523UBTL TRANS PNP 50V 0.1A UMT3FM
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