PartNumber | 2SB1122S-TD-E | 2SB1121S-TD-E | 2SB1121T-TD-E |
Description | Bipolar Transistors - BJT BIP PNP 1A 50V | Bipolar Transistors - BJT BIP PNP 2A 25V | Bipolar Transistors - BJT BIP PNP 2A 25V |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | Y | Y |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Transistor Polarity | PNP | PNP | PNP |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | 50 V | - 25 V | - 25 V |
Collector Base Voltage VCBO | - 60 V | - 30 V | - 30 V |
Emitter Base Voltage VEBO | - 5 V | - 6 V | - 6 V |
Collector Emitter Saturation Voltage | - 0.18 V | - 0.6 V | - 0.35 V |
Maximum DC Collector Current | - 2 A | - | - 5 A |
Gain Bandwidth Product fT | 150 MHz | 150 MHz | 150 MHz |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Series | 2SB1122 | 2SB1121 | 2SB1121 |
DC Current Gain hFE Max | 560 | 400 | 560 |
Packaging | Reel | Reel | Reel |
Brand | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Continuous Collector Current | - 1 A | - 2 A | - 2 A |
DC Collector/Base Gain hfe Min | 140 | 65 | - |
Pd Power Dissipation | 1.3 W | 500 mW | 1.3 W |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 1000 | 1000 | 1000 |
Subcategory | Transistors | Transistors | Transistors |
Unit Weight | 0.001806 oz | - | 0.001816 oz |
Technology | - | Si | - |
Package / Case | - | TO-243-3 | - |