PartNumber | 2SB1132T100P | 2SB1132T1 BA | 2SB1132T100-Q |
Description | Bipolar Transistors - BJT DVR PNP 32V 1A | ||
Manufacturer | ROHM Semiconductor | CJ | - |
Product Category | Bipolar Transistors - BJT | IC Chips | - |
RoHS | Y | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | MPT-3 | - | - |
Transistor Polarity | PNP | - | - |
Configuration | Single | - | - |
Collector Emitter Voltage VCEO Max | - 32 V | - | - |
Collector Base Voltage VCBO | - 40 V | - | - |
Emitter Base Voltage VEBO | - 5 V | - | - |
Collector Emitter Saturation Voltage | - 0.2 V | - | - |
Maximum DC Collector Current | - 1 A | - | - |
Gain Bandwidth Product fT | 150 MHz | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Series | 2SB1132 | - | - |
DC Current Gain hFE Max | 390 | - | - |
Height | 1.5 mm | - | - |
Length | 4.5 mm | - | - |
Packaging | Reel | - | - |
Width | 2.5 mm | - | - |
Brand | ROHM Semiconductor | - | - |
Continuous Collector Current | - 1 A | - | - |
DC Collector/Base Gain hfe Min | 120 | - | - |
Pd Power Dissipation | 2 W | - | - |
Product Type | BJTs - Bipolar Transistors | - | - |
Factory Pack Quantity | 1000 | - | - |
Subcategory | Transistors | - | - |