 | | | |
| PartNumber | 2SB1182TLQ | 2SB1182TLQ-ND | 2SB1182TLQ-CUT TAPE |
| Description | Bipolar Transistors - BJT D-PAK;BCE PNP;DRIVER SMT HFE RANK Q | ||
| Manufacturer | ROHM Semiconductor | SANYO | - |
| Product Category | Bipolar Transistors - BJT | Transistors (BJT) - Single | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | - 32 V | - | - |
| Collector Base Voltage VCBO | - 40 V | - | - |
| Emitter Base Voltage VEBO | - 5 V | - | - |
| Maximum DC Collector Current | 2 A | - | - |
| Gain Bandwidth Product fT | 100 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | 2SB1182 | - | - |
| DC Current Gain hFE Max | 390 | - | - |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Packaging | Reel | - | - |
| Width | 5.5 mm | - | - |
| Brand | ROHM Semiconductor | - | - |
| Continuous Collector Current | - 2 A | - | - |
| DC Collector/Base Gain hfe Min | 82 | - | - |
| Pd Power Dissipation | 10 W | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.009185 oz | - | - |