2SB1386T100

2SB1386T100Q vs 2SB1386T100 vs 2SB1386T100Q,TPS2561DRCT

 
PartNumber2SB1386T100Q2SB1386T1002SB1386T100Q,TPS2561DRCT
DescriptionBipolar Transistors - BJT PNP 20V 5A
ManufacturerROHM SemiconductorRohm Semiconductor-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSY--
Mounting StyleSMD/SMTSMD/SMT-
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max- 20 V--
Collector Base Voltage VCBO- 30 V--
Emitter Base Voltage VEBO- 6 V--
Maximum DC Collector Current5 A5 A-
Gain Bandwidth Product fT120 MHz120 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
DC Current Gain hFE Max390390-
Height1.5 mm--
Length4.5 mm--
PackagingReelDigi-ReelR Alternate Packaging-
Width2.5 mm--
BrandROHM Semiconductor--
Continuous Collector Current- 5 A- 5 A-
DC Collector/Base Gain hfe Min82--
Pd Power Dissipation500 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity1000--
SubcategoryTransistors--
Unit Weight0.004603 oz0.004603 oz-
Series---
Package Case-TO-243AA-
Mounting Type-Surface Mount-
Supplier Device Package-MPT3-
Power Max-2W-
Transistor Type-PNP-
Current Collector Ic Max-5A-
Voltage Collector Emitter Breakdown Max-20V-
DC Current Gain hFE Min Ic Vce-120 @ 500mA, 2V-
Vce Saturation Max Ib Ic-1V @ 100mA, 4A-
Current Collector Cutoff Max-500nA (ICBO)-
Frequency Transition-120MHz-
Pd Power Dissipation-0.5 W-
Collector Emitter Voltage VCEO Max-- 20 V-
Collector Base Voltage VCBO-- 30 V-
Emitter Base Voltage VEBO-- 6 V-
DC Collector Base Gain hfe Min-82-
Manufacturer Part # Description RFQ
2SB1386T100R Bipolar Transistors - BJT PNP 20V 5A
2SB1386T100Q Bipolar Transistors - BJT PNP 20V 5A
2SB1386T100 New and Original
2SB1386T100Q,TPS2561DRCT New and Original
2SB1386T100Q,TPS2561DRCT,BB502MBS-TL New and Original
2SB1386T100R,2SB1386,B13 New and Original
2SB1386T100R,TPS2590RSAT New and Original
2SB1386T100Q TRANS PNP 20V 5A SOT-89
2SB1386T100R TRANS PNP 20V 5A SOT-89
2SB1386T100Q-CUT TAPE New and Original
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