PartNumber | 2SC3326-A,LF | 2SC3326-B,LF | 2SC3326-A(TE85L,F) |
Description | Bipolar Transistors - BJT Transistor for Low Freq. Amplification | Bipolar Transistors - BJT Transistor for Low Freq. Amplification | Bipolar Transistors - BJT NPN 0.3A IC 20V Gen Purp Trans |
Manufacturer | Toshiba | Toshiba | Toshiba |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | Y | Y |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-236-3 | TO-236-3 | SOT-346-3 |
Transistor Polarity | NPN | NPN | NPN |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | 20 V | 20 V | 20 V |
Collector Base Voltage VCBO | 50 V | 50 V | 50 V |
Emitter Base Voltage VEBO | 25 V | 25 V | 25 V |
Collector Emitter Saturation Voltage | 42 mV | 42 mV | 0.042 V |
Maximum DC Collector Current | 300 mA | 300 mA | 300 mA |
Gain Bandwidth Product fT | 30 MHz | 30 MHz | 30 MHz |
Maximum Operating Temperature | + 125 C | + 125 C | - |
Series | 2SC3326 | 2SC3326 | 2SC3326 |
DC Current Gain hFE Max | 1200 | 1200 | 1200 |
Packaging | Reel | Reel | Reel |
Brand | Toshiba | Toshiba | Toshiba |
DC Collector/Base Gain hfe Min | 200 | 200 | 200 |
Pd Power Dissipation | 150 mW | 150 mW | 150 mW |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | Transistors | Transistors | Transistors |
Unit Weight | 0.000423 oz | 0.000423 oz | - |
Continuous Collector Current | - | - | 300 mA |