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| PartNumber | 2SC4102T106R | 2SC4102T106RS |
| Description | Bipolar Transistors - BJT NPN 120V 50MA | |
| Manufacturer | ROHM Semiconductor | - |
| Product Category | Bipolar Transistors - BJT | - |
| RoHS | Y | - |
| Mounting Style | SMD/SMT | - |
| Package / Case | SOT-323-3 | - |
| Transistor Polarity | NPN | - |
| Configuration | Single | - |
| Collector Emitter Voltage VCEO Max | 120 V | - |
| Collector Base Voltage VCBO | 120 V | - |
| Emitter Base Voltage VEBO | 5 V | - |
| Collector Emitter Saturation Voltage | 0.5 V | - |
| Maximum DC Collector Current | 0.05 A | - |
| Gain Bandwidth Product fT | 140 MHz | - |
| Maximum Operating Temperature | + 150 C | - |
| Series | 2SC4102 | - |
| DC Current Gain hFE Max | 560 | - |
| Height | 0.8 mm | - |
| Length | 2 mm | - |
| Packaging | Reel | - |
| Width | 1.25 mm | - |
| Brand | ROHM Semiconductor | - |
| Continuous Collector Current | 50 mA | - |
| DC Collector/Base Gain hfe Min | 180 | - |
| Pd Power Dissipation | 300 mW | - |
| Product Type | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 3000 | - |
| Subcategory | Transistors | - |
| Unit Weight | 0.000176 oz | - |