2SC4211-6

2SC4211-6-TL vs 2SC4211-6-TL , RBR2LAM60 vs 2SC4211-6-TL-E

 
PartNumber2SC4211-6-TL2SC4211-6-TL , RBR2LAM602SC4211-6-TL-E
DescriptionBipolar Transistors - BJT BIP NPN 0.15A 50V
ManufacturerSANYO-ON Semiconductor
Product CategoryTransistors (BJT) - Single-Transistors - Bipolar (BJT) - RF
Series--2SC4211-6-TL-E
Packaging--Reel
Unit Weight--0.002116 oz
Mounting Style--SMD/SMT
Package Case--SOT-323
Configuration--Single
Pd Power Dissipation--0.15 W
Collector Emitter Voltage VCEO Max--- 50 V
Transistor Polarity--PNP
Collector Emitter Saturation Voltage--- 400 mV
Collector Base Voltage VCBO--- 55 V
Emitter Base Voltage VEBO--6 V
Maximum DC Collector Current--- 150 mA
Gain Bandwidth Product fT--200 MHz
Continuous Collector Current--0.15 A
DC Collector Base Gain hfe Min--135
DC Current Gain hFE Max--600
Manufacturer Part # Description RFQ
2SC4211-6-TL New and Original
2SC4211-6-TL , RBR2LAM60 New and Original
2SC4211-6-TL-E , RBR2LAM New and Original
ON Semiconductor
ON Semiconductor
2SC4211-6-TL-E Bipolar Transistors - BJT BIP NPN 0.15A 50V
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