2SC5086-O

2SC5086-O,LF vs 2SC5086-O vs 2SC5086-OLFCT-ND

 
PartNumber2SC5086-O,LF2SC5086-O2SC5086-OLFCT-ND
DescriptionRF Bipolar Transistors Radio-Frequency Bipolar Transistor
ManufacturerToshiba--
Product CategoryRF Bipolar Transistors--
RoHSY--
Series2SC5086--
TechnologySi--
Transistor PolarityNPN--
DC Collector/Base Gain hfe Min80--
Collector Emitter Voltage VCEO Max12 V--
Emitter Base Voltage VEBO3 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 125 C--
ConfigurationSingle--
Mounting StyleSMD/SMT--
Package / CaseSC-75-3--
PackagingReel--
Collector Base Voltage VCBO20 V--
DC Current Gain hFE Max240 at 20 mA at 10 V--
BrandToshiba--
Gain Bandwidth Product fT7 GHz--
Maximum DC Collector Current80 mA--
Pd Power Dissipation100 mW--
Product TypeRF Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Manufacturer Part # Description RFQ
Toshiba
Toshiba
2SC5086-O,LF RF Bipolar Transistors Radio-Frequency Bipolar Transistor
2SC5086-O New and Original
2SC5086-O,LF RF Bipolar Transistors Radio-Frequency Bipolar Transisto
2SC5086-OLFCT-ND New and Original
2SC5086-OLFDKR-ND New and Original
2SC5086-OLFTR-ND New and Original
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