| PartNumber | 2SC5200N(S1,E,S) | 2SC5200-O(Q) | 2SC5200OTU |
| Description | Bipolar Transistors - BJT POWER TRANSISTOR PC=150W; F=30MHZ | Bipolar Transistors - BJT NPN 230V 15A | Bipolar Transistors - BJT NPN 230V 15A 150W |
| Manufacturer | Toshiba | Toshiba | ON Semiconductor |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y | Y |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-3P-3 | TO-3P-3 | TO-264-3 |
| Transistor Polarity | NPN | NPN | NPN |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | 230 V | 230 V | 230 V |
| Collector Base Voltage VCBO | 230 V | 230 V | 230 V |
| Emitter Base Voltage VEBO | 5 V | 5 V | 5 V |
| Collector Emitter Saturation Voltage | 0.4 V | - | - |
| Maximum DC Collector Current | 15 A | 15 A | 15 A |
| Gain Bandwidth Product fT | 30 MHz | 30 MHz | 30 MHz |
| Minimum Operating Temperature | - 55 C | - 55 C | - 50 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Series | 2SC5200 | 2SC5200 | 2SC5200 |
| DC Current Gain hFE Max | 160 | - | - |
| Brand | Toshiba | Toshiba | ON Semiconductor / Fairchild |
| Continuous Collector Current | 15 A | - | - |
| DC Collector/Base Gain hfe Min | 35 | 80 | 80 |
| Pd Power Dissipation | 150 W | 150000 mW | 150000 mW |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 25 | 100 | 375 |
| Subcategory | Transistors | Transistors | Transistors |
| Unit Weight | 0.245577 oz | 0.239863 oz | 0.238311 oz |
| Height | - | 26 mm | 26 mm |
| Length | - | 20.5 mm (Max) | 20 mm |
| Width | - | 5.2 mm (Max) | 5 mm |
| Packaging | - | - | Tube |