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2SC5231A

2SC5231A-8-TL-E vs 2SC5231A-9-TL-E vs 2SC5231A-9-TL-E , MAX853

 
PartNumber2SC5231A-8-TL-E2SC5231A-9-TL-E2SC5231A-9-TL-E , MAX853
DescriptionBipolar Transistors - BJT HIGH-FREQUENCY AMPLIFIERBipolar Transistors - BJT BIP NPN 70MA 10V FT=7G
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - BJTTransistors - Bipolar (BJT) - RF-
RoHSY--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-3--
Transistor PolarityNPNNPN-
ConfigurationSingle--
Collector Emitter Voltage VCEO Max10 V--
Collector Base Voltage VCBO20 V--
Emitter Base Voltage VEBO2 V--
Gain Bandwidth Product fT7 GHz--
Maximum Operating Temperature+ 150 C--
Series2SC5231A2SC5231A-
DC Current Gain hFE Max180--
PackagingReelTape & Reel (TR)-
BrandON Semiconductor--
Continuous Collector Current70 mA70 mA-
DC Collector/Base Gain hfe Min90--
Pd Power Dissipation100 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Package Case-3-SMD, Gull Wing-
Mounting Type-Surface Mount-
Supplier Device Package-SMCP-
Power Max-100mW-
Transistor Type-NPN-
Current Collector Ic Max-70mA-
Voltage Collector Emitter Breakdown Max-10V-
DC Current Gain hFE Min Ic Vce-135 @ 20mA, 5V-
Frequency Transition-7GHz-
Noise Figure dB Typ f-1dB @ 1GHz-
Gain-12dB ~ 8.5dB @ 1GHz-
Pd Power Dissipation-100 mW-
Collector Emitter Voltage VCEO Max-10 V-
Emitter Base Voltage VEBO-2 V-
DC Collector Base Gain hfe Min-60-
Manufacturer Part # Description RFQ
ON Semiconductor
ON Semiconductor 		2SC5231A-8-TL-E Bipolar Transistors - BJT HIGH-FREQUENCY AMPLIFIER
2SC5231A-9-TL-E Bipolar Transistors - BJT BIP NPN 70MA 10V FT=7G
2SC5231A-8-TL-E Bipolar Transistors - BJT HIGH-FREQUENCY AMPLIFIER
2SC5231A-9-TL-E , MAX853 New and Original
2SC5231A-9-TL-E,BL6212CP New and Original
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