| PartNumber | 2SC536NG-NPA-AT | 2SC536NF-NPA-AT |
| Description | Bipolar Transistors - BJT BIP NPN 0.15A 50V | Bipolar Transistors - BJT BIP NPN 0.15A 50V |
| Manufacturer | ON Semiconductor | ON Semiconductor |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-92-3 | TO-92-3 |
| Transistor Polarity | NPN | NPN |
| Configuration | Single | Single |
| Collector Emitter Voltage VCEO Max | 50 V | 50 V |
| Collector Base Voltage VCBO | 60 V | 60 V |
| Emitter Base Voltage VEBO | 6 V | 6 V |
| Collector Emitter Saturation Voltage | 0.3 V | 0.3 V |
| Maximum DC Collector Current | 400 mA | 400 mA |
| Gain Bandwidth Product fT | 200 MHz | 200 MHz |
| DC Current Gain hFE Max | 560 | 320 |
| Packaging | Reel | Reel |
| Brand | ON Semiconductor | ON Semiconductor |
| Continuous Collector Current | 150 mA | 150 mA |
| DC Collector/Base Gain hfe Min | 160 | 160 |
| Pd Power Dissipation | 500 mW | 500 mW |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 1500 | 1500 |
| Subcategory | Transistors | Transistors |
| Unit Weight | 0.016000 oz | 0.016000 oz |
| Maximum Operating Temperature | - | + 150 C |