PartNumber | 2SC5551AE-TD-E | 2SC5551AF-TD-E | 2SC5551AF-TD-E/2SC5551AE |
Description | Bipolar Transistors - BJT RF Transistors 30V,300mA,fT=3.5GHz | RF Bipolar Transistors RF Transistors 30V,300mA,fT=3.5GHz | |
Manufacturer | ON Semiconductor | ON Semiconductor | - |
Product Category | Bipolar Transistors - BJT | RF Bipolar Transistors | - |
RoHS | Y | Y | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | PCP-3 | PCP-3 | - |
Transistor Polarity | NPN | NPN | - |
Configuration | Single | Single | - |
Collector Emitter Voltage VCEO Max | 30 V | 30 V | - |
Collector Base Voltage VCBO | 40 V | - | - |
Emitter Base Voltage VEBO | 2 V | 2 V | - |
Collector Emitter Saturation Voltage | 0.3 V | - | - |
Maximum DC Collector Current | 300 mA | - | - |
Gain Bandwidth Product fT | 3.5 GHz | - | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Series | 2SC5551A | 2SC5551A | - |
DC Current Gain hFE Max | 270 | - | - |
Packaging | Reel | Reel | - |
Brand | ON Semiconductor | ON Semiconductor | - |
Continuous Collector Current | 300 mA | 300 mA | - |
Pd Power Dissipation | 1.3 W | 1.3 W | - |
Product Type | BJTs - Bipolar Transistors | RF Bipolar Transistors | - |
Factory Pack Quantity | 1000 | 1000 | - |
Subcategory | Transistors | Transistors | - |
Unit Weight | 0.001804 oz | 0.001804 oz | - |
Transistor Type | - | Bipolar | - |
Technology | - | Si | - |
DC Collector/Base Gain hfe Min | - | 90 | - |
Minimum Operating Temperature | - | - 55 C | - |