2SC5706

2SC5706-E vs 2SC5706 vs 2SC5706-E,2SC5706-TL-E,C

 
PartNumber2SC5706-E2SC57062SC5706-E,2SC5706-TL-E,C
DescriptionBipolar Transistors - BJT BIP NPN 5A 50V
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleThrough Hole--
Package / CaseTO-251-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max50 V--
Collector Base Voltage VCBO100 V--
Emitter Base Voltage VEBO6 V--
Collector Emitter Saturation Voltage0.16 V--
Maximum DC Collector Current7.5 A--
Gain Bandwidth Product fT400 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Series2SC5706--
DC Current Gain hFE Max560--
PackagingBulk--
BrandON Semiconductor--
Continuous Collector Current5 A--
Pd Power Dissipation15 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity500--
SubcategoryTransistors--
Unit Weight0.139332 oz--
Manufacturer Part # Description RFQ
2SC5706-E Bipolar Transistors - BJT BIP NPN 5A 50V
2SC5706-TL-E Bipolar Transistors - BJT BIP NPN 5A 50V
2SC5706-P-E Bipolar Transistors - BJT BIP NPN 5A 50V
2SC5706 New and Original
2SC5706-E,2SC5706-TL-E,C New and Original
2SC5706-T-TL-E TRANSISTOR,BJT,NPN,50V V(BR)CEO,5A I(C),TO-252VAR, LEAD FREE
2SC5706PE Trans GP BJT NPN 50V 5A 800mW 3-Pin(3+Tab) TP
ON Semiconductor
ON Semiconductor
2SC5706-H Bipolar Transistors - BJT BIP NPN 5A 50V
2SC5706-P-TL-E Bipolar Transistors - BJT BIP NPN 5A 50V
2SC5706-P-E Bipolar Transistors - BJT BIP NPN 5A 50V
2SC5706-E Bipolar Transistors - BJT BIP NPN 5A 50V
2SC5706-TL-E Bipolar Transistors - BJT BIP NPN 5A 50V
2SC5706-TL-H Bipolar Transistors - BJT BIP NPN 5A 50V
2SC5706-H Bipolar Transistors - BJT BIP NPN 5A 50V
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