2SD1628G

2SD1628G-TD-E vs 2SD1628G-D-E vs 2SD1628G-TD

 
PartNumber2SD1628G-TD-E2SD1628G-D-E2SD1628G-TD
DescriptionBipolar Transistors - BJT BIP NPN 5A 20V
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CasePCP-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max20 V--
Collector Base Voltage VCBO60 V--
Emitter Base Voltage VEBO6 V--
Collector Emitter Saturation Voltage500 mV--
Maximum DC Collector Current8 A--
Gain Bandwidth Product fT120 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Series2SD1628--
DC Current Gain hFE Max560 at 500 mA, 2 V--
PackagingReel--
BrandON Semiconductor--
DC Collector/Base Gain hfe Min120--
Pd Power Dissipation1.5 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity1000--
SubcategoryTransistors--
Unit Weight0.001823 oz--
Manufacturer Part # Description RFQ
2SD1628G-TD-E Bipolar Transistors - BJT BIP NPN 5A 20V
2SD1628G-TD-H Bipolar Transistors - BJT BIP NPN 5A 20V
2SD1628G-D-E New and Original
2SD1628G-TD New and Original
ON Semiconductor
ON Semiconductor
2SD1628G-TD-H Bipolar Transistors - BJT BIP NPN 5A 20V
2SD1628G-TD-E Bipolar Transistors - BJT BIP NPN 5A 20V
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