PartNumber | 2SD1685G | 2SD1685F | 2SD1685 |
Description | Bipolar Transistors - BJT BIP NPN 5A 20V | Bipolar Transistors - BJT BIP NPN 5A 20V | |
Manufacturer | ON Semiconductor | ON Semiconductor | - |
Product Category | Bipolar Transistors - BJT | Transistors - Bipolar (BJT) - RF | - |
RoHS | Y | - | - |
Mounting Style | Through Hole | Through Hole | - |
Package / Case | TO-126ML-3 | - | - |
Transistor Polarity | NPN | NPN | - |
Configuration | Single | - | - |
Collector Emitter Voltage VCEO Max | 20 V | - | - |
Collector Base Voltage VCBO | 60 V | - | - |
Emitter Base Voltage VEBO | 6 V | - | - |
Collector Emitter Saturation Voltage | 500 mV | - | - |
Maximum DC Collector Current | 5 A | - | - |
Gain Bandwidth Product fT | 120 MHz | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Series | 2SD1685 | 2SD1685 | - |
DC Current Gain hFE Max | 560 | - | - |
Packaging | Bulk | Bulk | - |
Brand | ON Semiconductor | - | - |
Continuous Collector Current | 5 A | 5 A | - |
Pd Power Dissipation | 10 W | - | - |
Product Type | BJTs - Bipolar Transistors | - | - |
Factory Pack Quantity | 200 | - | - |
Subcategory | Transistors | - | - |
Unit Weight | 0.014110 oz | - | - |
Package Case | - | TO-126ML | - |
Pd Power Dissipation | - | 1.5 W | - |
Collector Emitter Voltage VCEO Max | - | 20 V | - |
Emitter Base Voltage VEBO | - | 6 V | - |
DC Collector Base Gain hfe Min | - | 120 | - |