PartNumber | 2SD1815S-E | 2SD1815 | 2SD1815S |
Description | Bipolar Transistors - BJT BIP NPN 3A 100V | ||
Manufacturer | ON Semiconductor | SAY | KB |
Product Category | Bipolar Transistors - BJT | Transistors (BJT) - Single | Transistors (BJT) - Single |
RoHS | Y | - | - |
Mounting Style | Through Hole | - | - |
Package / Case | TO-251-3 | - | - |
Transistor Polarity | NPN | - | - |
Configuration | Single | - | - |
Collector Emitter Voltage VCEO Max | 100 V | - | - |
Collector Base Voltage VCBO | 120 V | - | - |
Emitter Base Voltage VEBO | 6 V | - | - |
Collector Emitter Saturation Voltage | 150 mV | - | - |
Maximum DC Collector Current | 3 A | - | - |
Gain Bandwidth Product fT | 180 MHz | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Series | 2SD1815 | - | - |
DC Current Gain hFE Max | 400 | - | - |
Packaging | Bulk | - | - |
Brand | ON Semiconductor | - | - |
DC Collector/Base Gain hfe Min | 140 | - | - |
Pd Power Dissipation | 20 W | - | - |
Product Type | BJTs - Bipolar Transistors | - | - |
Factory Pack Quantity | 500 | - | - |
Subcategory | Transistors | - | - |
Unit Weight | 0.011993 oz | - | - |