PartNumber | 2SD1857TV2P | 2SD1857ATV2P | 2SD1857ATV2Q |
Description | Bipolar Transistors - BJT DVR NPN 120V 1.5A | Bipolar Transistors - BJT DVR NPN 160V 1.5A | Bipolar Transistors - BJT DVR NPN 160V 1.5A |
Manufacturer | ROHM Semiconductor | ROHM Semiconductor | ROHM Semiconductor |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | Y | Y |
Mounting Style | Through Hole | Through Hole | Through Hole |
Transistor Polarity | NPN | NPN | NPN |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | 120 V | 160 V | 160 V |
Collector Base Voltage VCBO | 120 V | 160 V | 160 V |
Emitter Base Voltage VEBO | 5 V | 5 V | 5 V |
Maximum DC Collector Current | 2 A | 1.5 A | 3 A |
Gain Bandwidth Product fT | 80 MHz | 80 MHz | 80 MHz |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
DC Current Gain hFE Max | 82 at 100 mA, 5 V | 82 at 100 mA, 5 V | 270 |
Height | 4.4 mm | 4.4 mm | 4.4 mm |
Length | 6.8 mm | 6.8 mm | 6.8 mm |
Packaging | Ammo Pack | Ammo Pack | Ammo Pack |
Width | 2.5 mm | 2.5 mm | 2.5 mm |
Brand | ROHM Semiconductor | ROHM Semiconductor | ROHM Semiconductor |
DC Collector/Base Gain hfe Min | 82 | 82 | 82 |
Pd Power Dissipation | 1000 mW | 1000 mW | 1 W |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 2500 | 2500 | 1 |
Subcategory | Transistors | Transistors | Transistors |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Continuous Collector Current | - | 1.5 A | 1.5 A |