2SD1918T

2SD1918TLQ vs 2SD1918TL vs 2SD1918TL-Q

 
PartNumber2SD1918TLQ2SD1918TL2SD1918TL-Q
DescriptionBipolar Transistors - BJT NPN 160V 1.5ATrans GP BJT NPN 160V 1.5A 10000mW 3-Pin(2+Tab) CPT T/R
ManufacturerROHM SemiconductorROHMROHM
Product CategoryBipolar Transistors - BJTTransistors (BJT) - SingleTransistors (BJT) - Single
RoHSY--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseCPT-3--
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max160 V--
Collector Base Voltage VCBO160 V--
Emitter Base Voltage VEBO5 V--
Maximum DC Collector Current1.5 A1.5 A-
Gain Bandwidth Product fT80 MHz80 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Series2SD19182SD1918-
DC Current Gain hFE Max120 at 100 mA, 5 V120 at 0.1 A at 5 V-
Height2.3 mm--
Length6.5 mm--
PackagingReelDigi-ReelR Alternate Packaging-
Width5.5 mm--
BrandROHM Semiconductor--
Continuous Collector Current1.5 A1.5 A-
DC Collector/Base Gain hfe Min120--
Pd Power Dissipation1000 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity2500--
SubcategoryTransistors--
Unit Weight0.009185 oz0.009185 oz-
Package Case-TO-252-3, DPak (2 Leads + Tab), SC-63-
Mounting Type-Surface Mount-
Supplier Device Package-CPT3-
Power Max-10W-
Transistor Type-NPN-
Current Collector Ic Max-1.5A-
Voltage Collector Emitter Breakdown Max-160V-
DC Current Gain hFE Min Ic Vce-120 @ 100mA, 5V-
Vce Saturation Max Ib Ic-2V @ 100mA, 1A-
Current Collector Cutoff Max-1μA (ICBO)-
Frequency Transition-80MHz-
Pd Power Dissipation-1000 mW-
Collector Emitter Voltage VCEO Max-160 V-
Collector Base Voltage VCBO-160 V-
Emitter Base Voltage VEBO-5 V-
DC Collector Base Gain hfe Min-120-
Manufacturer Part # Description RFQ
2SD1918TLQ Bipolar Transistors - BJT NPN 160V 1.5A
2SD1918TLQ TRANS NPN 160V 1.5A SOT-428
2SD1918TL Trans GP BJT NPN 160V 1.5A 10000mW 3-Pin(2+Tab) CPT T/R
2SD1918TL-Q New and Original
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