2SD1949T

2SD1949T106R vs 2SD1949T106Q vs 2SD1949T106Q,UNR5119GOL+

 
PartNumber2SD1949T106R2SD1949T106Q2SD1949T106Q,UNR5119GOL+
DescriptionBipolar Transistors - BJT NPN 50V 0.5A SOT-323TRANS NPN 50V 0.5A SOT-323
ManufacturerROHM SemiconductorRohm Semiconductor-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSY--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-323-3--
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max50 V--
Collector Base Voltage VCBO50 V--
Emitter Base Voltage VEBO5 V--
Maximum DC Collector Current0.5 A0.5 A-
Gain Bandwidth Product fT250 MHz250 MHz-
Maximum Operating Temperature+ 150 C+ 150 C-
Series2SD19492SD1949-
DC Current Gain hFE Max390390-
Height0.8 mm--
Length2 mm--
PackagingReelDigi-ReelR Alternate Packaging-
Width1.25 mm--
BrandROHM Semiconductor--
Continuous Collector Current0.5 A0.5 A-
DC Collector/Base Gain hfe Min120--
Pd Power Dissipation200 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000176 oz0.000219 oz-
Package Case-SC-70, SOT-323-
Mounting Type-Surface Mount-
Supplier Device Package-UMT3-
Power Max-200mW-
Transistor Type-NPN-
Current Collector Ic Max-500mA-
Voltage Collector Emitter Breakdown Max-50V-
DC Current Gain hFE Min Ic Vce-120 @ 10mA, 3V-
Vce Saturation Max Ib Ic-400mV @ 15mA, 150mA-
Current Collector Cutoff Max-500nA (ICBO)-
Frequency Transition-250MHz-
Pd Power Dissipation-0.2 W-
Collector Emitter Voltage VCEO Max-50 V-
Collector Emitter Saturation Voltage-0.4 V-
Collector Base Voltage VCBO-50 V-
Emitter Base Voltage VEBO-5 V-
DC Collector Base Gain hfe Min-120-
Manufacturer Part # Description RFQ
2SD1949T106R Bipolar Transistors - BJT NPN 50V 0.5A SOT-323
2SD1949T106R TRANS NPN 50V 0.5A SOT-323
2SD1949T106Q TRANS NPN 50V 0.5A SOT-323
2SD1949T106Q,UNR5119GOL+ New and Original
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