PartNumber | 2SK3075(TE12L,Q) | 2SK3075(TE12LQ)CT-ND | 2SK3075(TE12LQ)DKR-ND |
Description | RF MOSFET Transistors N-Ch Radio Freq 5A 20W 30V VDSS | ||
Manufacturer | Toshiba | - | - |
Product Category | RF MOSFET Transistors | - | - |
RoHS | Y | - | - |
Transistor Polarity | N-Channel | - | - |
Technology | Si | - | - |
Id Continuous Drain Current | 5 A | - | - |
Vds Drain Source Breakdown Voltage | 30 V | - | - |
Gain | 11.7 dB | - | - |
Output Power | 7.5 W | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | PW-X-4 | - | - |
Packaging | Reel | - | - |
Configuration | Single | - | - |
Operating Frequency | 520 MHz | - | - |
Series | 2SK3075 | - | - |
Type | RF Power MOSFET | - | - |
Brand | Toshiba | - | - |
Pd Power Dissipation | 20 W | - | - |
Product Type | RF MOSFET Transistors | - | - |
Factory Pack Quantity | 1000 | - | - |
Subcategory | MOSFETs | - | - |
Vgs Gate Source Voltage | 25 V | - | - |
Vgs th Gate Source Threshold Voltage | 1.5 V | - | - |
Unit Weight | 0.010582 oz | - | - |