 |  | | |
| PartNumber | 2SK3079ATE12LQ | 2SK3079ATE12LQCT-ND | 2SK3079ATE12LQDKR-ND |
| Description | RF MOSFET Transistors N-Ch Radio Freq 3A 20W 10V VDSS | ||
| Manufacturer | Toshiba | - | - |
| Product Category | RF MOSFET Transistors | - | - |
| RoHS | Y | - | - |
| Transistor Polarity | N-Channel | - | - |
| Technology | Si | - | - |
| Id Continuous Drain Current | 3 A | - | - |
| Vds Drain Source Breakdown Voltage | 10 V | - | - |
| Gain | 13.5 dB | - | - |
| Output Power | 2.2 W | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | PW-X-4 | - | - |
| Packaging | Reel | - | - |
| Configuration | Single | - | - |
| Operating Frequency | 470 MHz | - | - |
| Series | 2SK3079 | - | - |
| Type | RF Power MOSFET | - | - |
| Brand | Toshiba | - | - |
| Pd Power Dissipation | 20 W | - | - |
| Product Type | RF MOSFET Transistors | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Vgs Gate Source Voltage | 3 V | - | - |
| Vgs th Gate Source Threshold Voltage | 0.8 V | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Toshiba |
2SK3079ATE12LQ | RF MOSFET Transistors N-Ch Radio Freq 3A 20W 10V VDSS | |
| 2SK3079ATE12LQ | RF MOSFET Transistors N-Ch Radio Freq 3A 20W 10V VDSS | ||
| 2SK3079ATE12LQCT-ND | New and Original | ||
| 2SK3079ATE12LQDKR-ND | New and Original |