 |  | | |
| PartNumber | 2SK3475TE12LF | 2SK3475 | 2SK3475(TE12L,F) |
| Description | RF MOSFET Transistors N-Ch Radio Freq 1A 3W 20V VDSS | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | |
| Manufacturer | Toshiba | TOSHIBA | - |
| Product Category | RF MOSFET Transistors | RF FETs | - |
| RoHS | Y | - | - |
| Transistor Polarity | N-Channel | - | - |
| Technology | Si | - | - |
| Id Continuous Drain Current | 1 A | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Gain | 14.9 dB | - | - |
| Output Power | 630 mW | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | PW-Mini-3 | - | - |
| Packaging | Reel | - | - |
| Configuration | Single | - | - |
| Operating Frequency | 520 MHz | - | - |
| Series | 2SK3475 | - | - |
| Type | RF Power MOSFET | - | - |
| Brand | Toshiba | - | - |
| Pd Power Dissipation | 3 W | - | - |
| Product Type | RF MOSFET Transistors | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Vgs th Gate Source Threshold Voltage | 2.4 V | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Toshiba |
2SK3475TE12LF | RF MOSFET Transistors N-Ch Radio Freq 1A 3W 20V VDSS | |
| 2SK3475TE12LF | RF MOSFET Transistors N-Ch Radio Freq 1A 3W 20V VDSS | ||
| 2SK3475 | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | ||
| 2SK3475(TE12L,F) | New and Original | ||
| 2SK3475TE12LFCT-ND | New and Original | ||
| 2SK3475TE12LFDKR-ND | New and Original |