2SK3566(S

2SK3566(STA4,Q,M) vs 2SK3566(S5Q,J) vs 2SK3566(STA4QM)

 
PartNumber2SK3566(STA4,Q,M)2SK3566(S5Q,J)2SK3566(STA4QM)
DescriptionMOSFET N-Ch 900V 2.5A Rdson 6.4 OhmMOSFETs
ManufacturerToshiba--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220FP-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage900 V--
Id Continuous Drain Current2.5 A--
Rds On Drain Source Resistance5.6 Ohms--
Vgs Gate Source Voltage30 V--
Qg Gate Charge12 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation40 W--
ConfigurationSingle--
PackagingTube--
Height15 mm--
Length10 mm--
Series2SK3566--
Transistor Type1 N-Channel--
Width4.5 mm--
BrandToshiba--
Forward Transconductance Min2 S--
Fall Time30 ns--
Product TypeMOSFET--
Rise Time20 ns--
Factory Pack Quantity500--
SubcategoryMOSFETs--
Unit Weight0.211644 oz--
Manufacturer Part # Description RFQ
Toshiba
Toshiba
2SK3566(STA4,Q,M) MOSFET N-Ch 900V 2.5A Rdson 6.4 Ohm
2SK3566(STA4,Q,M) Darlington Transistors MOSFET N-Ch 900V 2.5A Rdson 6.4 Ohm
2SK3566(S5Q,J) MOSFETs
2SK3566(STA4QM) New and Original
2SK3566(STA4QM)-ND New and Original
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